Two new half-bridge MOSFET drivers, the Si9912 and Si9913, have been optimized for single-input, high-frequency switching in dc/dc converters. By offloading the power MOSFET drive requirement from the ...

Cree, Inc. introduced a new Cree MOSFET design kit that includes all of the components needed to evaluate Cree® MOSFET and Schottky diode performance in a configurable half bridge circuit. The design ...

A new pair of application-specific MOSFETs target high-power 48 V systems with improved dynamic current balance, eliminating ...

Dallas, Texas – August 25th, 2009 –– A range of four H-bridge MOSFET packages from Diodes Incorporated is set to dramatically simplify DC fan and CCFL inverter circuits, by reducing both component ...

When connecting two or more MOSFETs in parallel to support high current capability and lower conduction losses, it can be challenging for designers to ensure that the load current is shared equally ...

Pierre C. Fazan, Innovative Silicon Solutions, Le Landeron, Switzerland, Serguei Okhonin, Mikhail Nagoga, Jean-Michel Sallese, Swiss Federal Institute of Technology, Innovative Silicon Solutions, Le ...

iDEAL Semiconductor’s SuperQ technology has entered full production, with the first products being 150 V MOSFETs. A family of 200 V MOSFETs is sampling. New 150V MOSFETs have been unveiled Credit: ...

iDEAL Semiconductor's SuperQ technology has entered full production, with the first products being 150V MOSFETs. A family of 200V MOSFETs is sampling. SuperQ is the first significant advance in ...

BETHLEHEM, Pa., July 17, 2025 /PRNewswire/ -- iDEAL Semiconductor's SuperQ™ technology has entered full production, with the first products being 150 V MOSFETs. A family of 200 V MOSFETs is sampling.

Cree Inc.'s commercial silicon carbide power MOSFET, the CMF20120D , provides blocking voltages up to 1200V with an on-state resistance (RDSon) of 80m at 25C. The RDSon remains below 100 m across its ...