Researchers from Cambridge University's Microelectronics Research Centre and Hitachi Cambridge Laboratory made progress on building a single-electron memory in CMOS. The group has put together a 3 X 3 ...

Addressable memory can be integrated with other printed components, such as antennas and sensors, to create fully printed systems for interaction with everyday objects and the “Internet of things” ...

This report examines in detail Artificial Intelligence (AI), 5G, CMOS Image Sensor, and Memory Chips (DRAM, NAND, NVM). Markets for the ICs and their applications are forecast to 2025, and market ...

Two-dimensional (2D) materials, thin crystalline substances only a few atoms thick, have numerous advantageous properties ...

The AEFuse embedded, nonvolatile memory cores include what is said to be the first multiple-times-programmable (MTP) fuse fabricated in standard 0.25 µm and 0.18 µm CMOS processes ...

About the emPROM Memory System The emPROM (embedded multi-time Programmable Read-Only Memory) Memory System provides high density embedded NVM on a standard CMOS process with no additional mask or ...

0 comments on “ Memory Technology Added to Design IP Portfolio Uses Standard CMOS processes ” Leave a Reply You must Sign in or Register to post a comment.

Researchers have announced the demonstration of high-speed spin-orbit-torque magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology.

POSTECH Professor Jang-Sik Lee's research team develops ferroelectric NAND flash memory.

Here, we propose a CMOS-based hardware topology for single-cycle in-memory XOR/XNOR operations. Our design provides at least 2 times improvement in the latency compared with other existing ...

A 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+), dubbed the SST38VF6401B by Microchip, takes advantage of the company’s CMOS SuperFlash technology—a split-gate cell design and ...

Researchers have announced the demonstration of high-speed spin-orbit-torque magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology.