Machine Design

GaN transistor likes it hot

Move over silicon. A new gallium-nitride (GaN) transistor offers the promise of low-power consumption and high efficiency in high-power, high-temperature electronics such as motor drives for hybrid ...
Electronic Design

GaN Systems unveils 650 V GaN power transistors

OTTAWA, Ontario, Canada—GaN Systems, a global provider of GaN (gallium nitride) power semiconductors, has announced the industry’s highest current 650 V GaN E-HEMTs with the addition of the 150 A, 650 ...
Science Daily

GaN-on-Silicon for scalable high electron mobility transistors

Scientists have advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers that make up the device. The team created the high electron ...
Electronic Design

GaN Transistors – Drive Control, Thermal Management, and Isolation

This year, several companies are expected to bring 600/650 V Gallium Nitride (GaN) power transistors to market. Almost all will be normally-on (depletion mode) transistors connected in a cascode ...
Nanowerk

Are diamonds GaN's best friend? Revolutionizing transistor technology

(Nanowerk News) Researchers at Osaka Metropolitan University are proving that diamonds are so much more than just a girl’s best friend. Their groundbreaking research focuses on gallium nitride (GaN) ...
Business Wire

Gallium Semiconductor Unveils New GaN Transistor Product Portfolio

MILAN--(BUSINESS WIRE)--Gallium Semiconductor, an innovative supplier of RF Gallium Nitride (GaN) semiconductor solutions, today unveiled its broad portfolio of RF Power Transistor products at the ...
EDN

Advances in high power GaN HEMT transistors

Gallium nitride (GaN) HEMT based power transistors are fast becoming adopted for many high power amplifier applications from CW to pulsed or modulated requirements. The key advantage of GaN HEMT ...
EDN

GaN transistor meets rigorous automotive qualification

A 650-V, 60-A enhancement-mode GaN transistor from GaN Systems, the GS-065-060-5-T-A, meets and exceeds automotive reliability standards. The power transistor is not only AEC-Q101-qualifed, but also ...
Business Wire

Rad Hard GaN Transistors Offering Highest Density and Efficiency on the Market for Demanding Space Applications Available from EPC

EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC announces the introduction of the EPC7004 radiation-hardened GaN FET. The EPC7004 is a 100 V, 7 mΩ, 160 A Pulsed, rad-hard GaN FET in a small 6.56 mm 2 ...
SpaceNews

Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die

Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne ...
Nanowerk

Advancing GaN-on-Silicon for scalable high electron mobility transistors

(Nanowerk News) A team of researchers at the University of Illinois at Urbana-Champaign has advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the ...
EurekAlert!

Are diamonds GaN’s best friend? Revolutionizing transistor technology

The integration of a 3C-SiC layer between GaN and diamond significantly reduces thermal resistance at the interface and improves heat dissipation, allowing for better performance. Researchers at Osaka ...