Toshiba launches an 80 V AI power MOSFET for data center power supplies, delivering lower power loss, improved cooling, and ...
Toshiba launches an 80V N‑channel power MOSFET with its latest process, reducing losses and EMI to improve efficiency in AI data centers.
Toshiba Electronics unveils new 80V N-channel power MOSFET designed to improve efficiency in industrial power systems.
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “SSM10N961L,” a low on-resistance, 30V N-channel common-drain MOSFET, suitable for devices ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “SSM14N956L,” a 12V common-drain N-channel MOSFET with a current rating of 20A, for use in ...
A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...
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